济南晶恒 1997—
中国半导体分立器件研发制造基地
电子芯片,稳压二极管,开关二极管

标题

Configuration

Ch

Vds(V)

Id(A)

Pd(W)

Vgs(MAX)(V)

Vth(Min)(V)

Vth(Max)(V)

RDS(on)(typ)(Ω)@10V

Qg(typ)(nc)@10V

Ciss(typ)(pF)

OUTLINE

SJ11N60 Single N 600 11 151 ±30 2.5 4.5 0.38 32 720 TO-220
SJ11N60F Single N 600 11 35 ±30 2.5 4.5 0.38 32 720 ITO-220
SJ11N60D Single N 600 11 151 ±30 2.5 4.5 0.38 32 720 TO-263
SJ11N70 Single N 700 11 151 ±30 2.0 4.0 0.45 TO-220
SJ21N60 Single N 600 21 151 ±30 2.5 4.0 0.13 46 2328 TO-220
SJ21N60F Single N 600 21 34 ±30 2.5 4.0 0.13 46 2328 ITO-220
SJ21N60D Single N 600 21 151 ±30 2.5 4.0 0.13 46 2328 TO-263
SJ21N60E Single N 600 21 151 ±30 2.5 4.0 0.13 46 2328 TO-262
SJ21N60N Single N 600 21 151 ±30 2.5 4.0 0.13 46 2328 TO-251
SJ21N60M Single N 600 21 151 ±30 2.5 4.0 0.13 46 2328 TO-252
SJ5N65 Single N 650 5 151 ±30 2.5 4.5 0.85 7 298 TO-220AB
SJ5N65F Single N 650 5 35 ±30 2.5 4.5 0.85 7 298 ITO-220AB
SJ5N65D Single N 650 5 151 ±30 2.5 4.5 0.85 7 298 TO-263
SJ5N65N Single N 650 5 151 ±30 2.5 4.5 0.85 7 298 TO-251
SJ5N65M Single N 650 5 151 ±30 2.5 4.5 0.85 7 298 TO-252
SJ7N65 Single N 650 7 151 ±30 2.5 4.5 0.60 10.3 400 TO-220
SJ7N65F Single N 650 7 35 ±30 2.5 4.5 0.60 10.3 400 ITO-220
SJ7N65E Single N 650 7 151 ±30 2.5 4.5 0.60 10.3 400 TO-262
SJ7N65D Single N 650 7 151 ±30 2.5 4.5 0.60 10.3 400 TO-263
SJ7N65N Single N 650 7 151 ±30 2.5 4.5 0.60 10.3 400 TO-251
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